Feature - InGaN-based photodiode - Photovoltaic mode - Hermetic package - Low dark current - High reliability - Selectable detection range Specification - Operating temp: -30 ~ 85C - Dark current: < 1 nA max. - Detection range: 300 ~ 600nm - Peak responsivity: 0.1A/W

Feature - InGaN-based photodiode - Photovoltaic mode - Hermetic package - Low dark current - High reliability - Selectable detection range Specification - Operating temp: -30 ~ 85C - Dark current: < 1 nA max. - Detection range: 300 ~ 600nm - Peak responsivity:

Feature - InGaN-based photodiode - Photovoltaic mode - Hermetic package - Low dark current - High reliability - Selectable detection range Specification - Operating temp: -30 ~ 85C - Dark current: < 1 nA max. - Detection range: 300 ~ 600nm - Peak responsivity:

Feature - InGaN-based photodiode - Photovoltaic mode - Hermetic package - Low dark current - High reliability - Selectable detection range Specification - Operating temp: -30 ~ 85C - Dark current: < 1 nA max. - Detection range: 300 ~ 600nm - Peak responsivity:

Feature - InGaN-based photodiode - Photovoltaic mode - Hermetic package - Low dark current - High reliability - Selectable detection range Specification - Operating temp: -30 ~ 85C - Dark current: < 1 nA max. - Detection range: 300 ~ 600nm - Peak responsivity: 0.1A/W

Feature - InGaN-based photodiode - Photovoltaic mode - Hermetic package - Low dark current - High reliability - Selectable detection range Specification - Operating temp: -30 ~ 85C - Dark current: < 1 nA max. - Detection range: 300 ~ 600nm - Peak responsivity: 0.1A/W

Feature - InGaN-based photodiode - Photovoltaic mode - Hermetic package - Low dark current - High reliability - Selectable detection range Specification - Operating temp: -30 ~ 85C - Dark current: < 1 nA max. - Detection range: 300 ~ 600nm - Peak responsivity: 0.1A/W

Feature - InGaN-based photodiode - Photovoltaic mode - Hermetic package - Low dark current - High reliability - Selectable detection range Specification - Operating temp: -30 ~ 85C - Dark current: < 1 nA max. - Detection range: 300 ~ 600nm - Peak responsivity:

Feature - InGaN-based photodiode - Photovoltaic mode - Hermetic package - Low dark current - High reliability - Selectable detection range Specification - Operating temp: -30 ~ 85C - Dark current: < 1 nA max. - Detection range: 300 ~ 600nm - Peak responsivity:

Feature - InGaN-based photodiode - Photovoltaic mode - Hermetic package - Low dark current - High reliability - Selectable detection range Specification - Operating temp: -30 ~ 85C - Dark current: < 1 nA max. - Detection range: 300 ~ 600nm - Peak responsivity: 0.1A/W

Feature - InGaN-based photodiode - Photovoltaic mode - Hermetic package - Low dark current - High reliability - Selectable detection range Specification - Operating temp: -30 ~ 85C - Dark current: < 1 nA max. - Detection range: 300 ~ 600nm - Peak responsivity:

Feature - InGaN-based photodiode - Photovoltaic mode - Hermetic package - Low dark current - High reliability - Selectable detection range Specification - Operating temp: -30 ~ 85C - Dark current: < 1 nA max. - Detection range: 300 ~ 600nm - Peak responsivity: 0.1A/W