OZONE - Inductively Coupled Plasma Etcher

OZONE has been used to perform high speed etching for GaAs, GaN, Si deep trench. It offers a low risk manufacturing solution, high profit via high productivity to customer. Application Anisotropic etching of all type of silicon based film, etching of GaAs, GaN, Inp and other compound semiconductor material, fabrication of micromachines, etching of metal films. Technology High & uniform density ICP plasma Active wafer temperature control (He backside cooling) High process productivity Recipe storage and data logging Specification 1 process chamber 1 load lock chamber with standard wafer magazines Robot arm transfer module Electrostatic wafer clamping with He backside cooling High density plasma source RF generator & 13.56MHz auto matcher for ICP source&substrate bias Turbo molecular pump of high-vacuum pumping Auto pressure control with throttle valve Gas delivery module with mass flow controller Manual / PC, PLC control including Windows user interfacefor fully automatic process control