RTX-II

As devices are being highly accumulated and detailed, organizing Swallow Junction, Low Terminal Budget and Thermal Stress according to large diameter are being strongly required. This equipment is quick heat treatment device suitable for massive production of 8" and 12". wafer Massive production and efficiencies might be maximized through the optimized Foot Print of Two Chamber Type and various public applications. Benefits and Features High Precision Temperature ControlBy measuring the temperature of (high precision temperature control) wafer surface directly, it realizes high precision temperature control twice more accurate than existing RTP devices. (Existing RTP devices measures at the other side of wafer) Cluster (Process Integration)Cluster technology continuously treat surface characteristics improvement low pressure ? CVD with remote plasma as well as quick heat treatment. Minimizing Foot print (Minimum floor Space)Since it enables continuous close installation, it realizes minimizing the foot print. Process ApplicationRTA,RTO,RTN,RPO,RPN,RT-CVD Specifications Classification Process Chamber Cassette I/O Foot Print Wafer Transfer Dimensions (W ×D ×H) RTX-II max 3 Chamber 2 Cassettes 7.8 ?(3Chamber),3.0 x 2.6 L/L Chamber 900 ×1925 ×3150mm