PE-CVD for Silicon Wafer Solar Cell

PE-CVD for Silicon Wafer Solar Cell

PE-CVD for Silicon Wafer Solar Cell Made in Korea

Description

Features BCS5000 Plasma enhanced CVD system is batch-production equipment.That supports the application of silicon based thin film process of fearing step coverage and gap filling required during semiconductor fabrication and solar cell device processes, Including the applications of passivisation, isolation and dielectric insulation depositions. Application A-Si, Sio2, Si3N4 Deposition Passivisation, isolation Solar Cell Device Specification Sample Size : 156mm x 156mm x 4PCS Power Source : RF 13.56MHz Deposition Type : PECVD Plasma Type : Direct Plasma Substrate Temperature : Max. 450°C Working Pressure :  30m Torr ~ 5Torr Film Thickness Uniformity : ±2.5% Film Thickness Uniformity Wafer to wafer : ±2.5% Refractive Index : 1.9 ~ 2.3 Pump Station : Booster + Rotary pump

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