Standard ICP-RIE System

Standard ICP-RIE System

Standard ICP-RIE System Made in Korea

Description

Features IRS5000 High density plasma etching system is a standard type that supports the application of general metal & dielectric material film & III-V compound Material etching process for the field of semiconductor, Optical, Nano and MEMS Device. Application Metal etching Al2O3, Si, SiO2, Si3N4 Etching Ashing Process MEMS Application Specifications Plasma Source : Specially Designed Antenna Module for High Density Plasma Sample Capacity : 4", 6" Wafer Source(ICP) Power : RF 1000W Bias Power : RF 600W High Vacuum Pumping system : Turbo Molecular Pump + Mechanical Rotary Pump Sample Loading/Unloading : Vacuum Load-lock system Full Automation system(optional) Plasma Density : > 5 x 1011/cm3 Ultimate Pressure : < 5 x 10-6 Torr within 1 hour Etching Uniformity : <± 5% at 6 inch Area

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