Thin Film Etchant

Semiconductor and Thin Film Etchants for Microelectronic Circuits THIN FILM TRANSENE ETCHANTS OPERATING RANGE RECOMMENDEDRESIST APPLICATION Al ALUMINUM ETCHANTSTYPE ATYPE D at25 °C at 40 °C30Å/sec 80Å/sec40Å/sec 125Å/sec Negative*&Positive Semiconductor & Integrated CircuitsGaAs & GaP Devices Al2O3 TRANSETCH N 120 Å/sec at 180 °C SiO2 Semiconductor Devices BOE BUFFERED OXIDE ETCHANT Variable Negative* &Positive Semiconductor & Integrated Circuits Co2Si Cobalt Silicide 10Å/sec at 25 oC Negative* &Positive Microelectronics Cr CHROMIUM ETCHANTSCRE-473Chromium MaskTFD10201020AC at 25 °C at 40 °C14Å/sec 25Å/sec50Å/sec Negative*&Positive Thin Film Circuits Cr-SiCr-SiO CHROMIUM CERMETTFE 1000Å/min at 50 °C Negative* Thin Film Circuits Cu COPPER ETCHANTSCE-100CE-200APS-100Copper Etch 49-1 Copper Etch BTP 1 mil/min at 50 °C0.5 mil/min at 50 °C80Å/sec at 40 °C Screen ResistsPositive & Negative P.C.BoardsThin Film Circuits GaAs GALLIUM ARSENIDEGA ETCH 100GA ETCH 200GA ETCH 300AB ETCH 100Å/sec at 40 °C20Å/sec at 5 °C22Å/sec at 25 °CDefect Delineation Negative Microelectronic CircuitsSemiconductor Testing GaN GALLIUM NITRIDE 80 A/min SiO2 LED Ga2O3 GALLIUM OXIDE 10 sec at 25 °C Negative Microelectronic Circuits GaP GALLIUM PHOSPHIDE A Face(Ga):115 micron/hr at 80 °CB Face (P):210 micron/hr at 80 °C Negative Light Emitting Diodes Ge GERMANIUM 250Å/sec at 20 °C Negative* & Positive Semiconductor Devices GaN Gallium Nitride 80Å/min at 180 °C SiO2 Semiconductor and Integrated Circuits Au GOLD ETCHANTSTFATFACGE-8148GE-8110GE-8111 28Å/sec at 25 °C10Å/sec at 25 °C50Å/sec at 25 °C15Å/sec at 25 °C15Å/sec at 25 °C Negative*&Positive Thin Film CircuitsGaAs compatibleNi compatible In2O3ITO INDIUM OXIDEINDIUM TIN OXIDE 30 min at 25 °C Negative Microelectronic Circuits InP INDIUM PHOSPHIDE 30 mins at 25 °C Negative Microelectronic Circuits Fe2O3 IRON OXIDE MASK ETCHANTME-10ME-30 50Å/sec at 25 °C25Å/sec at 25 °C Negative*&Positive Microelectronic Circuits Polyimide KAPTON POLYIMIDEETCHANT 0.013 mil/min at 40 °C0.07 mil/min at 60 °C Negative* &Positive Polyimide/Copper Clad Laminates Mo MOLY ETCHANT TFM 55Å/sec at 30 °C85Å/sec at 60 °C Negative* Microelectronic Circuits NbNbNNbO NiobiumNiobium NitrideNiobium Oxide 50Å/sec at 25 oC Negative*&Positive Microelectronics Ni-Cr NICHROME ETCHANTSTFCTFN 20Å/sec at 25 °C50Å/sec at 40 °C Negative* & Positive Thin Film Circuits Ni NICKEL ETCHANTSTFBTFGType I 30Å/sec at 25 °C50Å/sec at 40 °C3 mil/hr at 40 °C Negative* & Positive Thin Film Circuits Ni-V Nickel-Vanadium Etch 30 A/sec at 20 °C Negative&Positive Microelectronics Pd PALLADIUM ETCHANTSPd Etch 1:1TFP 110Å/sec at 50 °C Negative* & Positive Semiconductor & Thin Film Circuits Pt PLATINUM ETCHANT 1:1 10Å/sec at 25 °C Positive Semiconductor & Thin Film Circuits Ru RUTHENIUM ETCH 20 A/sec at 20 °C Negative&Positive Microelectronics   REAGENT SEMICONDUCTOR ETCHANTS (RSE)   SEMICONDUCTOR DEFECT DELINEATION ETCHANTS Si REAGENT SEMICONDUCTOR ETCHANTS (RSE)SILICON SLOW ETCHSILICON MESA ETCHPREFERENTIAL SILICON ETCHANTSPSE 200PSE 300SOLAR CELL ETCHANTSSCE-200SCE-300WRIGHT ETCHANTWRIGHT-JENKINS ETCHANTSIRTL ETCHANT VariableVariableVariable1 mil/3 min at 100 °C25 ?/hr at 100 °C1 hr at 75-100 °C5-10 min at 118 °CDefect CharacterizationDefect CharacterizationDefect Characterization KMERPKP Type I<110><100><110><100>N/AN/AN/A SemiconductorDevicesSemiconductorDevicesMEMSSemiconductorsSolar CellsSemiconductor TestingSemiconductor TestingSemiconductor Testing SiC SILICON CARBIDE 80 A/min Negative LED SiO2 BUFFER HF IMPROVEDBD ETCHANTSILOXIDE ETCHTIMETCHSILOX VAPOX IIIBUFFERED OXIDE ETCHANTS (BOE) 800Å/min at 25 °CThermally GrownVariable40Å/sec at 25 °C90Å/min at 25 °C4000Å/min at 22 °CVariable Negative* &Positive Semiconductor & Integrated CircuitsPSG/BSGCVDCVDCVD SiO SILICON MONOXIDE ETCH 5000Å/min at 85 °C Negative* & Positive Semiconductor Devices Si3N4 TRANSETCH N 125 Å/min at 180 °C SiO2 (Silox) Semiconductor & Integrated Circuits Ag SILVER ETCHANT TFS 200 Å/sec at 25 °C Negative* & Positive Semiconductor & Thin Film Circuits Stainless Steel Nickel Etch Type I 45 Å/sec at 25 °C, AISI 316 Negative* & Positive Alloys TaTa3N5Ta2O5 SIE-8607Ta Etch 111 70 Å/sec at 25 °C30 Å/sec at 25 °C Negative* & Positive CapacitorsSemiconductors TaSi Tantalum Silicide Etch 50 A/sec at 20 °C Negative&Positive Thin Film Electronics/TD> Ti TITANIUM ETCHANTSTFTTFTN 25 Å/sec at 20 °C50 Å/sec at 30 °C10 Å/sec at 70 °C50 Å/sec at 85 °C Negative* & Positive Integrated CircuitsSiO2 Compatible TiN Titanium Nitride Etch 30 A/sec at 20 °C Negative&Positive Microelectronics Ti-W TI-TUNGSTEN ETCHANT TiW-30 20-30 Å/sec Negative* & Positive Thin Film CircuitsAdhesion Layer W TUNGSTEN ETCH TFW 140 Å/sec at 30 °C Negative* & Positive Integrated Circuits SnO NESA ETCHANTTE-100 0.02 micron/min at 20 °C Screen Resists Electronic Circuits   ELECTRONIC GRADE CHEMICALS (SOLVENTS, ACIDS)