Originally used for the production of bipolar devices, silicon epitaxial wafers have recently been adopted as a means of avoiding latch-up in CMOS devices. Expectations of these wafers are also growing because of reports that crystal originated particles in CZ wafers have adverse effects on highly integrated MOS devices. To meet this growing need, Hitachi Kokusai Electric offers its DC series of silicon epitaxial growing systems, featuring high-quality epitaxial layer growth and excellent cost performance.
Benefits and Features
Actualizes high efficiencies and quality through bulk processing, efficient gas substitution and rapid temperature control.
Improves operation rate and safety with easy maintenance structure.
Low particle generation due to ultra-clean design actualizes excellent yield rate. Since dual reactor design features metal outer bell-jar and quartz inner bell-jar, metal contamination can be minimized.
Specifications
Classification
Substrate Diameter
Batch Size
Dimensions (WxDxH)
ø125mm
ø150mm
ø200mm
ø300mm
DC - 9500
ø950mm
31Wafers
24Wafers
10Wafers
6Wafers
5600X4500X2400mm
DC-7000/9000 Series
Description
Product Inquiry
Purchase Product Catalog
Payment & Shipping Conditions:
- Payment: We accept payment through Paypal Only.
- Shipping: We will ship the catalog once the payment is received. And you will be receiving the catalog with in 10 -14 busines days. Shipping might be delayed in due to international shipping conditions which is depends on the countries receiveing. In case hard copy of catalog is not available then we will ship the soft copy.
- Refund: We can refund the order before shipping process was initiated. Incase Catalog not available, we will make sure to refund the order.
- Note: This is a Catalog Produt.
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