[EUCCK] Carl Zeiss Electron and Ion Beam M...

[EUCCK] Carl Zeiss Electron and Ion Beam M...

[EUCCK] Carl Zeiss Electron and Ion Beam M... Made in Korea

Description

ULTRA SeriesUltra High Resolution FE-SEM for Nano-scale Compositional Analysis ULTRA PLUSNanoanalytical tool for high resolutionimaging and material analysis The ULTRA FE-SEM is the ultimate lab tool to meet the most demanding requirements from material science, life science and semiconductor applications. The ULTRA FE-SEM integrates the GEMINI® technology utilising a newly developed Energy selective Backscattered detector (EsB®). The ULTRA features the GEMINI® in-lens SE detector for clear topographic imaging and the EsB® detector for compositional contrast imaging enabling simultaneous real time imaging and mixing of both signals. The EsB® detector incorporates filtering technology which enables high resolution energy selective BSE imaging at low voltages revealing previously unseen image details. Combined with the optional AsB® (Angle selective Backscattered electron) detector for compositional and crystal orientation imaging, the ULTRA FE-SEM delivers high resolution nanostructural information along with surface topography, composition, crystal orientation and magnetic domains. The key advantages of the ULTRA FE-SEM are as follows: Designed-in ease of use for high reliability in Multi-User laboratories EsB® detector for compositional information fully integrated Low kV BSE imaging at short working distance: WD = 1mm Ultra stable high beam current for analytical applications up to 100 nA at 0.2%/h GEMINI® technology with high efficiency in-lens detector for high contrast topographic imaging No magnetic field at the specimen level Superb resolution and image quality at high and low operating voltages Extremely wide operating voltage range from 0.02 - 30 kV Sub nm resolution at 15 kV Local Charge Compensator in ULTRA PLUS for imaging of non-conductive sample Specification Essential Specifications EVO® HD15 Resolution 1.3 nm at 20 kV1.5 nm at 15 kV2.8 nm at 1 kV2.5 nm at 30 kV (in VP mode) Acceleration Voltage 0.1-30kV Probe Current 4pA - 20nA (40nA optional for SIGMATM HV) Magnification 12x - 1,000,000x Electron Emitter Thermal field emission type Standard Detectors In-lens SE detector, ETSE detector, VPSE detector (in VP mode) Image Processing 7 integration and averaging modes System Control Windows® XP based SmartSEM® More information>> e-Book

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