Features
CIGS 5000 Series as R&D equiprent for compound thin film solar cell is consist of Transfer, Load Lock, MBE, back contact Squttering and window sputtering Chambers.
In CIGS series process Mo-back contact was deposited on a soda lime glass by sputtering system and the CIGS absorber layer over the Mo back contact growth technique using multi-source(Cu, In, Ga, Se) evaporation method. Then window layer consisted of ZnO or ITO thin film is coated by RF sputtering system.
Specifications
Deposition thickness
up to several ten thousands A for Mo, CIGS and ZnO film
Film thickness uniformity
= ±5% on 100mm x 100mm substrate
Film sheet resistance uniformity
= ±5% on 100mm x 100mm substrate(for Mo film)
In-situ temperature monitoring software of depositing CIGS film
Temperature uniformity
= ±3% on 100mm x 100mm substrate(on plate and Z-direction)
Substrate
Glass and flexible metal, 100mm x 100mm
Deposition
Mo film deposition by DC magnetron sputtering method
CIGS film deposition by MBE
Intrinsic and n type ZnO films by RF magnetron sputtering method
Throughput
100mm x 100mm x 1 sheet/ batch, using by loadlock
Vacuum chamber
Six-Way Transfer chamber, Load Lock chamber, MBE chamber, Mo and ZnO sputtering chamber
CIGS Thin Film Solar Cell
Description
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- Refund: We can refund the order before shipping process was initiated. Incase Catalog not available, we will make sure to refund the order.
- Note: This is a Catalog Produt.
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