PECVD-PVD Cluster System for Graphene Synthesis Manufacturers,PECVD-PVD Cluster System for Graphene Synthesis Suppliers

Description

Multi-functional cluster system combined with PECVD, sputter and E-beam evaporation for high quality graphene synthesis.

Special Features

Multi-functional cluster system combined with PECVD, sputter and E-beam evaporation for high quality graphene synthesis.

Maximum substrate heater temperature: 1,000°C for PECVD, 800°C for Sputter and 500°C for e-beam evaporation, respectively.

Automatic loading transfer chamber around which PECVD, Sputter and E-beam evaporation chambers are attached.

PC controled system : recipe save, open function, and fully automation except for e-beam evaporation module.

Specifications

PECVD

Wafer capacity : 8" x1

Average throughpu t: 2,000 wafer/year

Source power : 2.5kW (13.56MHz)

Bias power : 0.3kW (12.56MHz)

TMP : 1,100 l/sec

Dry pump : 9,000 l/min

Substrate heater : SiC coated graphite, Max.1,000°C

RF ICP coil : 2turns

MFC : CH4(50sccm), H2(200sccm), Ar(200sccm)

Pressure control : Automatic pressure control system

Sputter

Wafer capacity : 8" x1

Average throughpu t: 2,000 wafer/year

Sputter power : 1.5kW (DC)

Bias power : 0.3kW (13.56MHz)

TMP : 1,100 l/sec

Dry pump : 9,000 l/min

Substrate heater : SiC coated graphite, Max.800°C

MFC : Ar(100sccm), O2(50sccm), N2(50sccm)

Pressure control : Automatic pressure control system

E-Beam evaporation

Wafer capacity : 8" x1

Average throughpu t: 2,000 wafer/year

E-beam power : 10kW(10kV, 1A)

E-beam gun : 4 pocket, 25cc, 180°

TMP : 1,100 l/sec

Dry pump : 9,000 l/min

Substrate heater : SiC coated graphite, Max.500°C

Thickness monitor : SQC310

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