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Optical devices
Barrier layer
Solar cell
Special Features
High density PECVD system for a-Si:H and nc-Si:H layer.
Low temperature deposition of a-Si:H layer(under about 300°C).
Robot transporting system.
Specifications
Wafer capacity : 1 × 4"
Average throughput : Up to 5,000 wafers per year
Dimension : 2,100L × 1,700H ×
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SiNx dielectric material coating
SiOx dielectric material coating
SiOxNy dielectric material coating
Special Features
Capacitively-Coupled PECVD system with loadlock chamber for R&D and small scale production.
Automatic loadlock system with cassette.
Uniform gas distribution through shower head.
Specifications
Substrate temperature
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CNTs growth
Special Features
Small RF-PECVD system for CNT(Carbon Nano Tube) synthesis.
Low temperature synthesis of CNTs(under about 400°C).
Specifications
Heating range : 400 ~ 600°C
Average throughput : Up to 5,000 wafers per year
Wafer capacity : 1 × 4"
Dimension : 1,100L × 1,500H × 900W (mm3)
Power : AC 100W
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Optical waveguide
Barrier layer
Special Features
SiO2 PECVD system for R&D and small scale production.
Excellent thickness and reflective index uniformity in deposited layer (avg. 7µm).
Highly smooth surface(RMS roughness of deposited layer : 30.6Ã…).
Transformer coupled high density plasma.
Specifications
Wafer capacity : 1 ×
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Equipment for
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Graphene synthesis
Special Features
Multi-functional CVD system combined with ICP CVD and probe station.
Maximum substrate temperature: 1,000°C.
Automatic loading available during susceptor heating.
High density plasma source.
PC-control system.
Specifications
Wafer capacity : 6" wafer x 1
Average throughput: 4,800
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Specifications
Dimension : 1645(L)X1043.5(H)X630(W) (mm3)
Wafer Size : 6 inch
Motor Moving : 5mm/min ~ 300mm/min
Accuracy : 100µm
Control : Touch Panel
Main Power : 220V, 3phase,
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OLED barrier layers(ex. SiOx, SiNx, SiONx, etc)
Special Features
SiOx and SiNx rf-PECVD system for R&D and small scale production.
Designed to be compatible with OLED cluster system.
Transformer-coupled high density plasma source.
System and process controlled automatically by PC.
Specifications
Substrate : 100x100mm2, 150x150mm2
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Plasma modifications and PECVD of injection mold surface for forming automobile plastic parts.
Low friction and wear-resistant applications using plama nitriding and DLC deposition to various types of metal products.
Special Features
Batch type of large area plasma treatment, plasma nitriding & PECVD system.
(chamber size: ID:2,100mm,
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nanowires (Si & doped Si)
nanotubes
Special Features
Multi-functional thermal CVD system for nanowire synthesis.
Combined with plasma treatment and probe station.
Maximum substrate temperature : 900°C.
Growth direction controllable
Automatic loading available during subsceptor heating.
High density plasma source for chamber
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CNTs growth for field emission display device
Special Features
Small thermal CVD system for carbon nano tube synthesis.
Economical R&D system for CNTs synthesis,
Uniform heating zone,
Specifications
Heating range : 500 ~ 950°C
Average throughput : Up to 15,000 wafers per year
Wafer capacity : 3 × 2"
Dimension : 1,500L × 1,450H ×
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Multi-functional cluster system combined with PECVD, sputter and E-beam evaporation for high quality graphene synthesis.
Special Features
Multi-functional cluster system combined with PECVD, sputter and E-beam evaporation for high quality graphene synthesis.
Maximum substrate heater temperature: 1,000°C for PECVD, 800°C for Sputter and
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SiC coating, CNTs growth Normal CVD process
Special Features
Thermal CVD system for SiC coating with MTS bubbler system.
PC control based on PLC.
Convenient Al2O3 tube setup.
Ion exchange type scrubber for SiH4 and Cl gases.
High sensitivity gas detectors for H2, Cl, C3H8.
Uniform 3 heating zone.
Specifications Heating range ~
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[Product Description]:
PECVD ACL equipment is essential for the front end process of semiconductor manufacturing. It deposits an Amorphous Carbon Layer(ACL) on the surface of a wafer by generating the plasma in a vacuum chamber.
TES is the first and only local equipment manufacturer that successfully adopted PECVD ACL equipment for mass
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Each custom-manufactured extrusion tip is engineered with unique applications expertise, to ensure proper wire centering.
IWD Extrusion tips
Tungsten carbide: 0.020in to 0.500in
or 0.50mm to 12.5mm
Tool steel: up to 1.0in or up to 25mm
IWD Extrusion tips Applications:
Telephone,
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IWD company offers you customized extrusion tips (wire guides /tips), no sharp edges,accurate concentricity.
Please provide related information, in order to discuss the details of wire guides /tips with our salesman:
1. Bore diameter and quantity required
2. The
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SiC
Features:
high hardness (23GPa), high strength (450Mpa)
high wear resistance, corrosion resistance, thermal shock resistance (400'C)
high temperature resistance, oxiation resistance even at extreme temperatures
Specification:
Max Size : .500 -
Have various size of mold such as .350, 0320, 0270, cD250, etc.
Minimize machine
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The silicon ring mounted around wafer on ESC serves to maintain a uniform plasma density and etching rate
Applications
- Dry etcher process
- Focus Ring
- Insert Ring
- Collar Ring
- Shield Ring
- Hot Edge Ring
- Protection