-
Specifications
Dimension : 1645(L)X1043.5(H)X630(W) (mm3)
Wafer Size : 6 inch
Motor Moving : 5mm/min ~ 300mm/min
Accuracy : 100µm
Control : Touch Panel
Main Power : 220V, 3phase,
-
nanowires (Si & doped Si)
nanotubes
Special Features
Multi-functional thermal CVD system for nanowire synthesis.
Combined with plasma treatment and probe station.
Maximum substrate temperature : 900°C.
Growth direction controllable
Automatic loading available during subsceptor heating.
High density plasma source for chamber
-
CNTs growth for field emission display device
Special Features
Small thermal CVD system for carbon nano tube synthesis.
Economical R&D system for CNTs synthesis,
Uniform heating zone,
Specifications
Heating range : 500 ~ 950°C
Average throughput : Up to 15,000 wafers per year
Wafer capacity : 3 × 2"
Dimension : 1,500L × 1,450H ×
-
SiC coating, CNTs growth Normal CVD process
Special Features
Thermal CVD system for SiC coating with MTS bubbler system.
PC control based on PLC.
Convenient Al2O3 tube setup.
Ion exchange type scrubber for SiH4 and Cl gases.
High sensitivity gas detectors for H2, Cl, C3H8.
Uniform 3 heating zone.
Specifications Heating range ~