Thermal CVD system for nanowire synthesis Manufacturers,Thermal CVD system for nanowire synthesis Suppliers

Description

nanowires (Si & doped Si)

nanotubes

Special Features

Multi-functional thermal CVD system for nanowire synthesis.

Combined with plasma treatment and probe station.

Maximum substrate temperature : 900°C.

Growth direction controllable

Automatic loading available during subsceptor heating.

High density plasma source for chamber cleaning.

PC-based control system.

Specifications

Average throughput 4,800 wafer / year

Wafer capacity : 6" wafer × 1

Dimension : 1,175L × 1,551H × 870W (mm3)

Power : TCP power supply RF 1kW

Bias power supply RF 300W

Gas : GeH4, SiH4, H2, B2H6, PH3, N2, NH3

Heater : Heating element - graphite

max. temp. :1,200°C,

Pump : Dry pump (1,400 l/s)

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