Thermal CVD System for Uniform SiC coating Manufacturers,Thermal CVD System for Uniform SiC coating Suppliers

Description

SiC coating, CNTs growth Normal CVD process

Special Features

Thermal CVD system for SiC coating with MTS bubbler system.

PC control based on PLC.

Convenient Al2O3 tube setup.

Ion exchange type scrubber for SiH4 and Cl gases.

High sensitivity gas detectors for H2, Cl, C3H8.

Uniform 3 heating zone.

Specifications Heating range ~ 1200°C

Specifications

Average throughput : Up to 20,000 wafers per year

Dimension : 1,558L × 1,520H × 800W (mm3)

Power: 220V, 100A Gas : H2/C3H8/Ar/MTS (99%)

Furnace heater : kanthal A1(heating rate: 30°C/min, max. temp.: 1,400°C, deviation: ±5°C)

Pump : Rotary(600 l/min)

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