SiNx dielectric material coating
SiOx dielectric material coating
SiOxNy dielectric material coating
Special Features
Capacitively-Coupled PECVD system with loadlock chamber for R&D and small scale production.
Automatic loadlock system with cassette.
Uniform gas distribution through shower head.
Specifications
Substrate temperature uniformity : (<,=)±2°C @400°C within 6"
Thickness uniformity of deposited layers : <±2% @100nm within 6" (5mm edge exclusion)
Cycle time : <15mins
Average throughput : Up to 21,600 wafers per year
Dimension : 1,730L × 1,027H × 1,832W (mm3)
Power : AC 2kW (13.56MHz) VHF & MF Power compatible
Gas : NF3/O2/H2/SiH4/N2/NH3/N2O/Ar
Substrate material : Si wafer
Pump : Dry(1,200l/min & 200l/min) & turbo(600l/s)
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