ICP CVD system for Graphene and Boron Carbide Layers Manufacturers,ICP CVD system for Graphene and Boron Carbide Layers Suppliers

Description

Graphene synthesis

Special Features

Multi-functional CVD system combined with ICP CVD and probe station.

Maximum substrate temperature: 1,000°C.

Automatic loading available during susceptor heating.

High density plasma source.

PC-control system.

Specifications

Wafer capacity : 6" wafer x 1

Average throughput: 4,800 wafer/year

Dimension : 1,500W × 1,800D × 1,830H (mm3)

Power : ICP Power supply

Bias power supply

Heater : Heating element - SiC coated graphite(max. temp.:1,200°C)

Gas : Ar/CH4/H2/B2H2/C2H2/O2/N2/NH3

Pump : dry pump, turbo pump, booster pump

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