PECVD System for OLED Barrier Layers Manufacturers,PECVD System for OLED Barrier Layers Suppliers

Description

OLED barrier layers(ex. SiOx, SiNx, SiONx, etc)

Special Features

SiOx and SiNx rf-PECVD system for R&D and small scale production.

Designed to be compatible with OLED cluster system.

Transformer-coupled high density plasma source.

System and process controlled automatically by PC.

Specifications

Substrate : 100x100mm2, 150x150mm2 glass

Average throughput : Up to 5,000 substrates per year

Dimension : 1,400L × 1,900H × 2,000W (mm3)

Power : AC 3kW for TCP source(13.56MHz)

AC 600W for bias(13.56MHz)

Deposition gas : SiH4/NH3/N2/N2O/O2/He/H2

Chamber cleaning gas : NF3/N2O/O2

Heater : silicon carbide(heating rate: 40°C/min, max. temp.: 800°C, temp. deviation : negligible)

Pump : Dry(2,000 l/min) & Turbo(1,200 l/s)

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